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Andrew V. Teplyakov Professor Department of Chemisty and Biochemistry,University of Delaware, 112 Lammot DuPont Laboratory, Newark, DE 19716 Phone: (302) 831-1969
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Invited
Reviews, Concepts, Books:
87.
Tian, F. and Teplyakov, A. V. Silicon
surface functionalization targeting Si-N linkages. Langmuir
2013, dx.doi.org/10.1021/la303505s, Invited Feature
Article.
86. Teplyakov, A. V. Influence of functional groups in substituted aromatic molecules on the selection of reaction channel. In “Functionalization of Semiconductor Surfaces.” Edited book, editors: Dr. Feng Tao and Prof. Steven L. Bernasek, 2012, John Wiley & Sons, Inc., Hoboken, NJ, 2012, ISBN: 978-0-470-56294-9.
85. Dybowski, C. and
Teplyakov, A. Essential Data
and
Equations for a Course in Physical Chemistry, 2nd Edition, D
& T
Publishing, 2011, ISBN: 978-0-615-48597-3.
84.
83.
Dybowski, C. and Teplyakov,
A. Essential Data and Equations
for a
Course in Physical Chemistry, Pearson Publishing, 2009,
ISBN-13:
978-0-558-30403-4; ISBN-10: 0-558-30403-6.
82. Leftwich, T. R. and Teplyakov, A. V. Chemical Manipulation of Multifunctional Hydrocarbons on Silicon Surfaces. Invited Review. Surf. Sci. Rep. 2008, 63, 1-71.
81. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Chemistry of organometallic compounds on silicon: The first step in film growth. Invited Concept Paper. Chemistry-A European Journal 2007, 13, 9164-9176.
List of Publications:
80.
Gao, J. and Teplyakov, A. V. Surface species formed during thermal
transformation
of ethanol on ZnO powder. Accepted to J.
Catal.
79.
Lin, J.-M.; Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. A
Surface chemistry perspective on targeting metalorganic compounds as
precursors
for thin film deposition. Accepted to J. Vac.
Sci. Technol. A.
78.
Liu, Y.; Chen, J. and Teplyakov, A. V. Chemical
passivation processes for biofunctionalization schemes on
semiconductors surfaces. Langmuir 2012,
28 (44), 15521-15528.
77.
Liu, Y. and
Teplyakov, A. V. Using a Combination of
Microscopy and Spectroscopy to Confirm Covalent Bonding of DNA on
Functionalized Semiconductor Surfaces, SurFACTS
in Biomaterials, 2012, 17 (4),
10-11.
76.
Miller, T.; Lin, J.-M.; Pirolli, L.; Coquilleau, L.; Luharuka, R.
and Teplyakov, A. V. Investigation of thin titanium carbonitride
coatings deposited
onto stainless steel. Thin Solid Films
2012, 522, 193-198.
72.
Tian, F., Taber, D. F. and Teplyakov, A. V. –NH- termination on
Si(111) surface by wet chemistry. J. Am.
Chem. Soc. 2011, 133, 20769-20777.
71.
Polyakova (Stolyarova), E., Rim, K. T., Eom, D., Douglass, K., Opila,
R., Heinz, T., Teplyakov, A. V. and Flynn, G. W. Scanning tunneling
microscopy
and X-ray photoelectron spectroscopy studies of graphene films prepared
by sonication-assisted
dispersion. ACS Nano. Publications
ASAP: DOI: 10.1021/nn1009352.
70.
Bent, S. F.; Kachian, J. S.; Rodríguez-Reyes,
J. C. F. and Teplyakov, A. V. Tuning the reactivity of semiconductor
surfaces by functionalization with amines of different bacisity. PNAS 2011, 108(3), 956-960.
69. Douglass, K.; Hunt, S.; Teplyakov, A. and Opila, R. Surface cleaning procedures for thin films of indium gallium nitride grown on sapphire. Appl. Surf. Sci. 2010, 257, 1469-1472.
68.
Rodríguez-Reyes, J. C. F., Teplyakov, A. V. and Brown, S. D.
Qualitative and quantitative analysis of complex temperature-programmed
desorption data by multivariate curve resolution. Submitted to Surf. Sci.
67. Tian, F., Ni, C. and Teplyakov, A. V. Integrity of functional self-assembled monolayers on hydrogen-terminated silicon-on-insulator wafers. Submitted to Appl. Surf. Sci.
66.
65. Rodríguez-Reyes, J. C. F., Ni, C., Bui, H. P., Beebe, T. P., Jr., and Teplyakov, A. V. Reversible tuning of the surface chemical reactivity of titanium nitride and nitride-carbide diffusion barrier thin films. Chem. Mater. 2009, 21(21), 5163-5169.
64. Madachik, M. R. and Teplyakov, A. V. Coadsorption of ethylene and nitrobenzene on Si(100)-2x1: Towards surface patterning at the molecular level. J. Phys Chem. C 2009, 113, 18270-18275.
63.
Zhang, X., Antonopoulos,
62. Leftwich, T. R. and Teplyakov, A. V. Calibration of computationally predicted N 1s binding energies by comparison with X-ray photoelectron spectroscopy measurements. J. Electr. Spec. Rel. Phenom. 2009, 175, 31-40.
61.
Zhang, X., Kumar, S., Chen, J. and Teplyakov, A. V. Covalent
attachment of
60.
59.
Leftwich, T. R., Madachik, M. R. and Teplyakov, A. V. Dehydrative
cyclocondensation reactions on hydrogen-terminated Si(100) and Si(111):
An ex situ tool for the modification of
semiconductor surfaces. J. Am. Chem. Soc. 2008, 130, 16216-16223. This paper was
highlighted in C&EN, November 24, 2008, p. 8.
58. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Mechanisms of adsorption and decomposition of metallorganic precursors for nitride and carbonitride film growth. J. Appl. Phys. 2008, 104, 084907-1-084907-6.
57. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Role of surface strain in the subsurface migration of adsorbates on silicon. Phys Rev. B. 2008, 78, 165314-1-165314-14.
56. Madachik, M. and Teplyakov, A. V. Unique Lack of Chemical Reactivity for 2,3-Dimethyl-2-Butene on a Si(100)-2x1 Surface. J. Vac. Sci. Technol. A 2008, 26(5), 1241-1247.
55. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Chemisorption of tetrakis-dimethylamido-titanium on Si(100)-2x1: C-H and C-N bond reactivity leading to low-temperature decomposition pathways. J. Phys. Chem. C 2008, 112, 9695-0705.
54.
53. Leftwich, T. R. and Teplyakov, A. V. Cycloaddition reactions of phenylazide and benzylazide on a Si(100)-2x1 surface. J. Phys. Chem. C 2008, 112, 4297-4303.
52. Zhang, X. and Teplyakov, A. V. Adsorption of C60 Buckminster fullerenes on an 11-amino-1-undecene covered Si(111) substrate. Langmuir, 2008, 24, 810-820. This work is featured on the cover of the issue.
51. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Surface transamination reaction for tetrakis(dimethylamido)titanium with NHX-terminated Si(100) surfaces. J. Phys. Chem. C 2007, 111(44), 16498-16505.
50. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Cooperative nitrogen insertion processes: Thermal transformation of NH3 on a Si(100) surface. Phys. Rev. B, 2007, 76, 075348-1-075348-16.
49. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Chemistry of diffusion barrier film formation: Adsorption and dissociation of tetrakis-(dimethylamino)-titanium on Si(100)-2x1. J. Phys. Chem. C 2007, 111, 4800-4808.
48. Ni, C.; Zhang, Z.; Wells, M.; Beebe, T. P., Jr.; Pirolli, L.; Méndez De Leo, L. P., and Teplyakov, A. V. Effect of Film Thickness and the Presence of Surface Fluorine on the Structure of a Thin Barrier Film Deposited from tetrakis-(dimethylamino)-titanium onto a Si(100)-2x1 Substrate. Thin Solid Films 2007, 515, 3030-3039.
47. Pirolli, L. and Teplyakov, A. V. Adsorption and Thermal Chemistry of 1,1,1,5,5,5,-hexafluoro-2,4-pentanedione (hfacH) and (hexafluoroacetylacetonate)Cu (vinyltrimethylsilane) ((hfac)Cu(VTMS)) on TiCN-covered Si(100) Surface. Surf. Sci. 2006, 601, 155-164.
46.
Méndez De Leo, L. P.; Pirolli,
L. and Teplyakov, A. V. Chemistry of
1,1,1,5,5,5-hexafluoro-2,4-pentanedione on
Si(100)-2x1. J. Phys. Chem. B 2006, 110,
14337-14344.
45.
Pirolli,
L. and Teplyakov, A. V. Molecular View of Copper Deposition Chemistry:
(hexafluoroacetylacetonate)Cu(vinyltrimethylsilane) on a Si(100)-2x1
Surface. Surf.
Sci. 2006, 600, 3313-3320.
44.
Bocharov,
S.; Dmytrenko, O.; Méndez
De Leo, L. P. and Teplyakov, A. V. Azide Reactions for
Controlling Clean
Silicon Surface Chemistry: Benzylazide on Si(100)-2x1. J. Am. Chem.
Soc.
2006, 128, 9300-9301.
43.
Méndez
De Leo, L. P. and Teplyakov, A. V. Nitro Group as a Means
of Attaching Organic Molecules to Silicon: Nitrobenzene on Si(100)-2x1.
J.
Phys. Chem. B 2006, 110, 6899-6905.
42.
Pirolli,
L. and Teplyakov, A. V. Vinyltrimethylsilane (VTMS) as a Probe of
Chemical
Reactivity of a TiCN Diffusion Barrier-Covered Silicon Surface. J.
Phys.
Chem. B. 2006, 110, 4708-4716.
41. Pirolli, L. and Teplyakov, A. V. Complex Thermal Chemistry of Vinyltrimethylsilane (VTMS) on Si(100)-2´1. J. Phys. Chem. B 2005, 109(17), 8462-8468.
40. Watras, M. J. and Teplyakov, A. V. An Infrared and Computational Investigation of Vanadium-Substituted Keggin [PVnW12-nO40](n+3)- Polyoxometallic Anions. J. Phys. Chem. B 2005, 109(18), 8928-8934.
39.Bocharov, S.; Zhang, Z.; Beebe, T. P., Jr., and Teplyakov, A. V. Structure of a thin barrier film deposited from tetrakis-(dimethylamido)-titanium onto a Si(100) substrate. Thin Solid Films 2005, 471, 159-165.
38. Bocharov, S. and Teplyakov, A. V. Adsorption, ordering, and chemistry of nitrobenzene on Si(100)-2x1. Surf. Sci. 2004, 573, 403-412.
37. Bulanin, K. M.; Kong, M. J.; Pirolli, L.; Mathauser, A. T. and Teplyakov, A. V. Adsorption and thermal decomposition of diethyaluminum hydride on Si(100)-2x1. Surf. Sci. 2003, 542, 167-176.
36. Wingrave, J. and Teplyakov, A. V. Infrared spectrometer attachment assembly for use with vacuum and high-pressure cells. J. Vac. Sci. Technol. A 2003, 21(5), 1800-1801.
35. Bocharov, S.; Mathauser, A. T. and Teplyakov, A. V. Adsorption and Thermal Chemistry of Nitroethane on Si(100)-2x1. J. Phys. Chem. B. 2003, 107, 7776-7782.
34. Dmitrenko, O.; Huang, W.; Polenova, T. E.; Francesconi, L. C.; Wingrave, J. A. and Teplyakov, A. V. Effect of Cations in Infrared and Computational Analysis of Vanadium-Containing Six-Coordinate Oxotungstates. J. Phys. Chem. B. 2003, 107, 7747-7752.
33. Bocharov, S. and Teplyakov, A. V. Spectroscopic Evidence for Hydrogen Diffusion through Several-Nanometers-Thick Titanium Carbonitride Layer on Silicon. J. Am. Chem. Soc. 2003, 125, 7196-7197.
32. Mathauser, A. T. and Teplyakov, A. V. The effects of surface poisoning by HCl on cyclization processes on a Cu3Pt(111) surface. Surf. Sci. 2003, 523, 37-47.
31. Müller, T.; Flynn, G. W.; Mathauser, A. T.; Teplyakov, A. V. Temperature-programmed desorption studies of n-alkane derivatives on graphite: Desorption energetics and the influence of functional groups on adsorbate self-assembly. Langmuir 2003, 19, 2812-2821.
30. Bulanin, K. M.; Shah, A. G.; Fitzgerald, D. R.; Doren, D. J.; Teplyakov, A. V. Kinetically-favored adsorbate ordering: Hydrogen and iodine on the Si(100)-2x1 surface. J. Phys. Chem. B 2002, 106, 7286-7289.
29. Bulanin, K.; Shah, A. and Teplyakov, A. V. Infrared spectroscopy studies of iodoethane on Si(100)-2x1: Adsorption and thermal decomposition leading to adsorbate ordering. J. Chem. Phys. 2001, 115(15), 7187-7195.
28. Mathauser, A. T. and Teplyakov, A. V. Naphthalene formation on Cu3Pt(111): dehydrocyclization of 4-phenyl-1-butene. Catal. Lett. 2001, 73(2-4), 207-210.
27. Mathauser, A. T.; He, H.; and Teplyakov, A. V. Adsorption and thermally induced reactions of halocyclohexanes on a Cu3Pt(111) surface. Surf. Sci. 2001, 479, 213-223.
26. He, H.; Mathauser, A. T.; and Teplyakov, A. V. Self-Limiting Heterogeneous Reactions: Bifunctional Hydrocarbon on a Bimetallic Alloy Surface. J. Phys. Chem. 2000, 104 (51), 12306-12314.
25. Kong, M. J.; Teplyakov, A. V.; Jagmohan, J.; Lyubovitsky, J. G.; Mui, C.; and Bent, S. F. Interaction of C6 cyclic hydrocarbons with a Si(100)-2x1 surface: adsorption and hydrogenation reactions. J. Phys. Chem. B 2000, 104, 3000-3007.
24. Gurevich, A. B.; Bent, B. E.; Teplyakov, A. V. and Chen, J. G. A NEXAFS investigation of the formation and decomposition of CuO and Cu2O thin films on Cu(100). Surf. Sci. 1999, 442, L971-L976.
23. Lal, P.; Noah, Y.; Kong, M. J.; Teplyakov, A. V. and Bent, S. F. Adsorption of ethylene on the Ge(100)-2 x 1 surface: Coverage and time-dependent behavior. J. Chem. Phys. 1999, 110 (21), 10545-10553.
22. Teplyakov, A. V.; Lal, P.; Noah, Y. A.; Bent, S. F. Evidence for a Retro-Diels-Alder Reaction on a Single Crystal Surface: Butadienes on Ge(100). J. Am. Chem. Soc. 1998, 120 (29), 7377-7378.
21. Kong, M. J.; Teplyakov, A. V. and Bent, S. F. NEXAFS studies of adsorption and reaction of benzene on Si(100)-(2x1). Surf. Sci. 1998, 411, 286-293.
20. Teplyakov, A. V.; Kong, M. J. and Bent, S. F. Diels-Alder reactions of butadienes with the Si(100)-2x1 surface as a dienophile: vibrational spectroscopy, thermal desorption and near edge X-ray absorption fine structure studies. J. Chem. Phys. 1998, 108 (11), 4599-4606.
19. Teplyakov, A. V.; Bent, B. E.; Eng, J., Jr. and Chen, J. G. Vibrational mode-softening of alkanes on clean and modified Cu and Mo surfaces: absence of a simple correlation with thermal desorption temperatures. Surf. Sci. 1998, 399, L342-L350.
18. Gurevich, A. B.; Teplyakov, A. V.; Yang, M. X. and Bent, B. E. Synthesis, bonding and reactions of p-bonded allyl groups on Cu(100): allyl radical ejection. Langmuir 1998, 14 (6), 1419-1427.
17.
Teplyakov, A.
V.; Gurevich, A. B.;
16. Lusvardi, V. S.; Barteau, M. A.; Chen, J. G; Eng, J., Jr.; Frühberger, B. and Teplyakov, A. V. A NEXAFS investigation of the reduction and reoxidation of TiO2(001). Surf. Sci. 1998, 397, 237-250.
15. Yang, M. X.; Teplyakov, A. V. and Bent, B. E. Regioselectivity of deuterium atom addition to olefin monolayers on Cu(100). J. Phys. Chem. B 1998, 102 (16), 2985-2990.
14. Teplyakov, A. V.; Gurevich, A. B.; Yang, M. X.; Chen, J. G. and Bent, B. E. NEXAFS and TPD studies of molecular adsorption of hydrocarbons on Cu(100): segmental correlations with the heats of adsorption. Surf. Sci. 1998, 396, 340-348.
13. Teplyakov, A. V.; Kong, M. J. and Bent, S. F. Vibrational spectroscopic studies of Diels-Alder reactions with the Si(100)-2x1 surface as a dienophile. J. Am. Chem. Soc. 1997, 119, 11100-11101.
12. Teplyakov, A. V. Bonding and reactions of hydrocarbons and their fragments on single crystal surfaces of copper and copper-platinum alloy: identification of surface intermediates and reaction mechanisms. (1997), 274 pp. Ph. D. Thesis.
11. Teplyakov, A. V. and Bent, B. E. Mechanism of dehydrocyclization of 1-hexene to benzene on Cu3Pt(111). J. Phys. Chem. B 1997, 101, 9052-9059.
10. Kash, P. W.; Yang, M. X.; Teplyakov, A. V.; Flynn, G. W. and Bent, B. E. Chemical displacement of molecules adsorbed on surfaces: low temperature studies with application to surface reactions . J. Phys. Chem. B 1997, 101, 7908-7918.
9. Teplyakov, A. V. and Bent, B. E. Dehydrocyclization of 1-hexene to benzene on Cu3Pt(111). Catal. Lett. 1996, 42 (1,2), 1-4.
8. Teplyakov, A. V. and Bent, B. E. Infrared spectroscopic study of the chemical displacement of hydrocarbon monolayers from a Cu(100) surface. Chem. Phys. Lett. 1996, 260, 65-70.
7. Lin, J.-L.; Teplyakov, A. V. and Bent, B. E. The effects of alkyl chain structure on carbon-halogen bond dissociation and b-hydride elimination by alkyl halides on a Cu(100) surface. J. Phys. Chem. 1996, 100, 10721-10731.
6. Teplyakov, A. V. and Bent, B. E. Distinguishing direct and quasi-direct mechanisms for an Eley-Rideal gas-surface reaction: stereochemistry of H addition to cyclohexene on Cu(100). J. Chem. Soc. Faraday Trans. 1995, 91 (20), 3645-3654.
5. Teplyakov, A. V. and Bent, B. E. b-Hydride elimination from alkyl and cycloalkyl groups on Cu(100) surface: ring strain and planarity of the transition state. J. Am. Chem. Soc. 1995, 117, 10076-10087.
4.
Netrusov, A.; Teplyakov, A.; Bessarabov, D.
and Teplyakov V.
Gas separation systems for biotechnology by integrated membranes with
moving
liquid carriers. Conf. Adv.
Biochem.
3.
Teplyakov, V.; Beckman,
2. Beckman, I. N.; Bessarabov, D. G., Teplyakov, V. V. and Teplyakov, A. V. Integrated membrane systems with moving liquid carriers for multicomponent gas separation. BHR Group Conf. Ser. Publ. 1993, 3 (Effective Membrane Processes-New Perspectives), 297-306.
1.
Beckman, I. N.; Gladkov, V. S.; Teplyakov,
V. V.; Teplyakov,
A. V. and Kuznetsov, L. P. Method of membrane-absorption separation of
gas
mixtures and the set up for. Application
for patent of the